Epoxy potting compound for the encapsulation of silicon carbide devices

It is primarily used for the encapsulation of various high-power electronic components requiring resistance to high and low temperatures and to damp heat, particularly for the insulating encapsulation of power devices such as SiC chips and IPMs, serving as a substitute for similar domestic products.

Low shrinkage, high glass transition temperature and an extremely low coefficient of linear expansion.

 

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